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MMBD4448W
Document number: DS30095 Rev. 12 - 2
2 of 4
www.diodes.com
February 2011
? Diodes Incorporated
MMBD4448W
Maximum Ratings
@TA
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Non-Repetitive Peak Reverse Voltage
VRM
100 V
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
75 V
RMS Reverse Voltage
VR(RMS)
53 V
Forward Continuous Current (Note 4)
IFM
500 mA
Average Rectified Output Current (Note 4)
IO
250 mA
Non-Repetitive Peak Forward Surge Current @ t = 1.0μs
@ t = 1.0s
IFSM
4.0
1.0
A
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 4)
PD
200 mW
Thermal Resistance Junction to Ambient Air (Note 4)
RθJA
625
°C/W
Operating and Storage Temperature Range
TJ,
TSTG
-65 to +150
°C
Electrical Characteristics
@TA
= 25°C unless otherwise specified
Characteristic Symbol Min Max Unit Test Condition
Reverse Breakdown Voltage (Note 5)
V(BR)R
75
?
V
IR
= 10
μA
Forward Voltage
VF
0.62
?
?
?
0.72
0.855
1.0
1.25
V
IF
= 5.0mA
IF
= 10mA
IF
= 100mA
IF
= 150mA
Reverse Current (Note 5)
IR
?
1.0
50
30
25
μA
μA
μA
nA
VR
= 75V
VR
= 75V, T
J
= 150°C
VR
= 25V, T
J
= 150°C
VR
= 20V
Total Capacitance
CT
?
2.0 pF VR
= 0, f = 1.0MHz
Reverse Recovery Time
trr
?
4.0 ns IF
= I
R
= 10mA,
Irr
= 0.1 x I
R, RL
= 100
Ω
Notes: 4. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com.
5. Short duration pulse test used to minimize self-heating effect.
0
50
100
150
200
250
P
,
P
O
WE
R
DISSI
P
A
T
I
O
N
(mW)
D
T , AMBIENT TEMPERATURE ( C)A
°
Fig. 1 Power Derating Curve
0140
80
20160 200
10
100
1,000
1
0.10
1.6
1.2
0.4 0.8
I, I
N
S
T
A
N
T
A
N
E
O
U
S
F
O
R
WA
R
D
C
U
R
R
E
N
T
(mA)
F
V , INSTANTANEOUS FORWARD VOLTAGE (V)F
Fig. 2 Typical Forward Characteristics
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